AVS 46th International Symposium
    Surface Science Division Wednesday Sessions
       Session SS-WeP

Paper SS-WeP14
In-situ Study on the Formation of SiC Thin Films on Si(111) Surface with 1,3-disilabutane: Adsorption Properties and Initial Deposition Characteristics

Wednesday, October 27, 1999, 5:30 pm, Room 4C

Session: Poster Session
Presenter: W.L. Liu, SungKyunKwan University, Korea
Authors: H.G. Yoon, SungKyunKwan University, Korea
J.-H. Boo, SungKyunKwan University, Korea
S.-B. Lee, SungKyunKwan University, Korea
W.L. Liu, SungKyunKwan University, Korea
S.-C. Park, Pohang University of Science and Technology, Korea
H. Kang, Pohang University of Science and Technology, Korea
Y. Kim, Korea Research Institute of Chemical Technology
Correspondent: Click to Email
The adsorption properties of 1,3-disilabutane (DSB), SiH@sub 3@-CH@sub 2@-SiH@sub 2@-CH@sub 3@, and an initial deposition characteristics for the formation of SiC thin films on Si(111) surfaces have been studied in the temperature range of 150 - 1200 K in situ by XPS, UPS, TDS, and Cs@super +@ ion reactive scattering methods. After DSB dosing at 300 K, only one adsorbed state was obtained from XPS and UPS. The C 1s and Si 2p XP spectra appeared at ca. 283 and 99.5 eV showed no chemical (binding energy) shifts between RT and 600 K indicating a SiC cluster and/or islands formation. With increasing the surface temperature to 1200 K, however, a gradual binding energy shifts of both Si 2p and C 1s XP peaks to the higher values were observed due to a crystalline SiC thin film deposition. During deposition, moreover, we also identify the intermediate states of the thermal decomposition reaction of DSB on a Si(111) surface with Cs@super +@ ion reactive scattering. Several kinds of intermediates as CsCH@sub 4@Si@super +@, CsC@sub 2@H@sub 8@Si @sub 2@@super +@, CH@sub 4@Si@super +@, and CH@sub 3@Si@super +@ were detected at 150 K. In the case of DSB deposition between 800 K and 950 K, on the other hand, only one intermediate (i.e. CsCH@sub 4@Si@super +@) was observed indicating that most of C@sub 2@H@sub 8@Si@sub 2@ adsorbates have been reacted away at these temperatures, forming either CH@sub 4@Si or SiC thin films on the surface. Based on the experimental results of XPS, UPS, TDS, and Cs@super +@ ion reactive scattering, in this work, we proposed a possible chemisorption geometry and decomposition mechanism of DSB.