AVS 46th International Symposium
    Surface Science Division Wednesday Sessions
       Session SS-WeP

Paper SS-WeP1
Strain and Strain Relief in Gadolinium(0001) Thin Films on Mo(112)

Wednesday, October 27, 1999, 5:30 pm, Room 4C

Session: Poster Session
Presenter: T. Komesu, University of Nebraska, Lincoln
Authors: T. Komesu, University of Nebraska, Lincoln
H. Jeong, University of Nebraska, Lincoln
P.A. Dowben, University of Nebraska, Lincoln
Correspondent: Click to Email
The electronic structure of strained and unstrained Gd(0001) has been studied with spin-polarized photoemission spectroscopy and spin-polarized inverse photoemission spectroscopy. In this work, we observed that relaxation of the expansively strained crystal in-plane lattice constant, of Gd(0001) on Mo(112), significantly diminishes the differences in the electronic structure from that observed for Gd(0001) grown on W(110). The defects incorporated in Gd films, with increasing film thickness, lead to both lattice relaxation and a loss of net polarization for Gd(0001) grown on Mo(112).