AVS 46th International Symposium
    Organic Electronic Materials Topical Conference Monday Sessions
       Session OE-MoP

Paper OE-MoP3
Contact Resistance Measurements on Individual Grains of @alpha@-Sexithiophene

Monday, October 25, 1999, 5:30 pm, Room 4C

Session: Poster Session
Presenter: A.B. Chwang, University of Minnesota
Authors: A.B. Chwang, University of Minnesota
C.D. Frisbie, University of Minnesota
Correspondent: Click to Email
We describe four point probe measurements on individual grains of the molecular semiconductor sexithiophene (6T). These measurements utilize thin 6T grains (2-14 nm in thickness and 1-2 µm in length and width) deposited by vacuum sublimation onto SiO@sub 2@/Si substrates previously patterned with sets of four closely spaced (<400 nm) Au electrodes. The 6T grains grow between the four contacts and their electrical behavior is probed as a function of temperature and gate voltage applied to the substrate. From these data, we extract the Au-6T contact resistance and determine its sensitivity to both gate field and temperature.