AVS 46th International Symposium
    Organic Electronic Materials Topical Conference Monday Sessions
       Session OE+EM+FP-MoM

Paper OE+EM+FP-MoM9
Sub-microsecond Switching of n and p-Channel Organic Field Effect Transistors

Monday, October 25, 1999, 11:00 am, Room 616/617

Session: Organic Devices
Presenter: B.K. Crone, Lucent Technologies, Bell Laboratories
Authors: B.K. Crone, Lucent Technologies, Bell Laboratories
A. Dodabalapur, Lucent Technologies, Bell Laboratories
Z. Bao, Lucent Technologies, Bell Laboratories
W. Li, Lucent Technologies, Bell Laboratories
Correspondent: Click to Email
Steady state and transient electrical characteristics are presented for p-channel (@alpha@,@omega@-dihexyl quinquethiophene) and n-channel (copper hexadecaflourophthalocyanine) organic field effect transistors. The structure of the transistor is as follows. The gate electrode is a doped silicon wafer with a thermal oxide gate oxide. Gold source and drain contacts are evaporated and photolithographically defined on the oxide, and finally the active organic film is evaporated. The transistors measured had channel length of 4 µm and width 250 µm. Field effect carrier mobilities are determined for both the steady state and transient response using a simple model for the saturated drain current. The steady state mobility and threshold voltage were determined by a linear fit to the square root of the saturated drain current versus gate voltage. Steady state mobilities of 1.5x10@super -2@cm@super 2@/Vs for the p-channel and 3x10@super -2@cm@super 2@/Vs for the n-channel were measured. Transient mobilities were determined using the same model for the saturated drain current and the threshold voltage obtained in the steady state case. Transient mobilities were higher, 3x10@super -2@cm@super 2@/Vs for the p-channel and 1.5x10@super -1@cm@super 2@/Vs for the n-channel devices. The transient responses showed switching times less than 1 µsec for both p and n-channel devices.