AVS 46th International Symposium
    Topical Conference on Emerging Opportunities and Issues in Nanotubes and Nanoelectronics Wednesday Sessions
       Session NT+NS+EM+MS-WeP

Paper NT+NS+EM+MS-WeP4
The Selective Growth of Aligned Carbon Nanotubes by PECVD Using Nickel Catalyst

Wednesday, October 27, 1999, 5:30 pm, Room 4C

Session: Poster Session
Presenter: H. Jeon, Hanyang University, Korea
Authors: H. Jeon, Hanyang University, Korea
K. Ryu, Hanyang University, Korea
M. Kang, Hanyang University, Korea
Correspondent: Click to Email
Carbon nanotubes have been studied extensively because of their own unique physical properties and also of their application potential for field emitters. One of the interesting applications is reported for display application, but neither industrial fabrication technology nor performance has been reported for practical display application. Here we tried to grow aligned carbon nanotubes selectively by plasma enhanced chemical vapor deposition (PECVD) method using nickel catalyst@footnote 1@ at temperatures below 600°C. These conditions for low temperature growths are suitable for field emission display which requires carbon nanotube emitters grown perpendicular to the Si substrate. In our experiment, a thin film of nickel(10-100nm) was deposited through a pattern mask on a Si substrate in UHV e-beam evaporator and was agglomerated by in-situ annealing for thirty minutes at 700°C. The use of a patterned catalyst enhanced the formation of selectively aligned nanotubes at low temperatures. After this process, Ni particles deposited on Si substrate were examined by AFM and SEM. Carbon nanotubes were selectively grown on Ni particle by PECVD with using the mixture of CH@sub 4@ and NH@sub 3@ at 600°C. In this process, CH@sub 4@ was used as the carbon source and NH@sub 3@ was used as a catalyst and dilution gas. During the process, many carboneous impurities can be produced and tried to eliminated by introducing H@sub 2@ plasmas. We examined the physical properties of carbon nanotubes by SEM, XRD and Raman spectroscopy. And we investigated the formation temperature of carbon nanotubes on silicon substrate and controlled the selective growth of aligned nanotubes. @FootnoteText@ @footnote 1@ Masako Yudasaka, et al.,Appl. Phys. Lett. 70(14), 7 April 1997.