AVS 46th International Symposium
    Topical Conference on Emerging Opportunities and Issues in Nanotubes and Nanoelectronics Wednesday Sessions
       Session NT+NS+EM+MS-WeP

Paper NT+NS+EM+MS-WeP1
Growth of Carbon Nanotubes at Low Temperature by Microwave Plasma-enhanced Chemical Vapor Deposition

Wednesday, October 27, 1999, 5:30 pm, Room 4C

Session: Poster Session
Presenter: Y.C. Choi, Jeonbuk National University, Korea
Authors: Y.C. Choi, Jeonbuk National University, Korea
D.J. Bae, Jeonbuk National University, Korea
Y.H. Lee, Jeonbuk National University, Korea
B.S. Lee, Jeonbuk National University, Korea
Correspondent: Click to Email
We have grown carbon nanotubes at temperatures below 520 C by microwave plasma-enhanced chemical vapor deposition using methane and hydrogen gases. Carbon nanotubes were uniformly grown in large area of transition metal-coated Si substrates with high density. Each nanotube is terminated by transition metal cap, suggesting that the transition metals play an important role in the nanotube growth. Carbon nanotubes are curly in all cases, indicating the nanotubes to be defective due to very low growth temperature. Diameters and lengths of the nanotubes could be controlled by changing the ratio of methane to hydrogen and growth time. Raman spectum clearly shows the peak at 1592 cm-1 (G-band), indicating the formation of well graphitized carbon nanotubes.