AVS 46th International Symposium
    Topical Conference on Emerging Opportunities and Issues in Nanotubes and Nanoelectronics Wednesday Sessions
       Session NT+NS+EM+MS-WeA

Paper NT+NS+EM+MS-WeA7
Growth of Vertically Aligned Carbon Nanotubes on Transition-metal Catalyzed Plain Silicon Substrates using Thermal Chemical Vapor Deposition

Wednesday, October 27, 1999, 4:00 pm, Room 6C

Session: Nanotubes: Growth, Characterization and Properties I
Presenter: Y.H. Lee, Jeonbuk National University, Korea
Authors: Y.H. Lee, Jeonbuk National University, Korea
Y.C. Choi, Jeonbuk National University, Korea
C.J. Lee, Kunsan National University, Korea
Y.B. Han, Jeonbuk National University, Korea
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Vertically aligned carbon nanotubes have been grown on a large area of transition-metal coated plain silicon substrates by thermal chemical vapor deposition method. We find that vertically aligned growth is critically dependent on the domain density in the transition metal cluster. Steric hindrance between nanotubes at an initial stage of the growth forces nanotubes to align vertically. Nanotubes are then further grown by the catalyst-cap growth mechanism. We also show emission patterns from aligned nanotubes. Our current approach of simple integration of stable field-emission displays on a large area puts a step forward to future display applications.