AVS 46th International Symposium
    Topical Conference on Emerging Opportunities and Issues in Nanotubes and Nanoelectronics Thursday Sessions
       Session NT+NS+EM+MS-ThM

Paper NT+NS+EM+MS-ThM5
Novel Length Scales in Nanotube Devices

Thursday, October 28, 1999, 9:40 am, Room 6C

Session: Nanotubes: Nanoelectronics and Field Emission
Presenter: F. Léonard, IBM T.J. Watson Research Center
Authors: F. Léonard, IBM T.J. Watson Research Center
J. Tersoff, IBM T.J. Watson Research Center
Correspondent: Click to Email
We calculate the properties of p-n junctions, n-i junctions, and Schottky barriers made on a single-wall carbon nanotube. In contrast to planar bulk junctions, the depletion width for nanotubes varies exponentially with inverse doping. In addition, there is a very long-range (logarithmic) tail in the charge distribution, extending over the entire tube. These effects can render traditional devices unworkable, while opening new possibilities for device design. Our general conclusions should apply to a broad class of nanotube heterojunctions, and to other quasi-one-dimensional ``molecular wire" devices.