AVS 46th International Symposium
    Nanometer-scale Science and Technology Division Monday Sessions
       Session NS2-MoA

Paper NS2-MoA5
Low-Temperature Tunneling Spectroscopy of the Tip-induced Quantum Dot on n-InAs(110)

Monday, October 25, 1999, 3:20 pm, Room 6C

Session: Quantum Dots and Wires
Presenter: M. Morgenstern, University of Hamburg, Germany
Authors: R. Wiesendanger, University of Hamburg, Germany
M. Morgenstern, University of Hamburg, Germany
R. Dombrowski, University of Hamburg, Germany
Ch. Whittneven, University of Hamburg, Germany
Correspondent: Click to Email
The local tip-induced band bending in scanning tunneling microscopy (STM) studies of semiconductor surfaces leads to a quantum-dot-like potential. Scanning tunneling spectroscopy (STS) on n-InAs(110) at negative sample bias has been applied to determine the energies of the quantized states of the tip-induced quantum dot. Additionally, the magnetic-field dispersion of these states has been studied showing clearly the expected splitting of the first excited state in agreement with Hartree-Fock calculations. At positive sample bias the local tunneling spectra were found to be dominated by the Landau bands of the tip-induced quantum dot. Moreover, spatially-dependent spin splittings of the Landau bands were observed, induced by the spatially varying spin polarization of the tip-induced quantum dot.