AVS 46th International Symposium
    Nanometer-scale Science and Technology Division Wednesday Sessions
       Session NS-WeM

Paper NS-WeM6
Fabrication of Nanoscale Metal Wires on the Si(001) Surface Using Scanning Tunneling Microscopy

Wednesday, October 27, 1999, 10:00 am, Room 612

Session: Nanopatterning
Presenter: T. Mitsui, University of Minnesota
Authors: T. Mitsui, University of Minnesota
E. Hill, University of Minnesota
R. Curtis, University of Minnesota
E. Ganz, University of Minnesota
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Nanoscale wires are fabricated on the Si(001)-(2x1) surface using an atomic hydrogen resist process.@footnote 1@ The patterning is achieved by removing small areas of the hydrogen passivation layer with a scanning tunneling microscope. Pattern transfer is performed by chemical vapor deposition (CVD) or physical vapor deposition (PVD). CVD provides higher selectivity than PVD. However, Ti selective CVD growth from TiCl@sub 4@ is self limiting by Cl passivation. Growth can be resumed by removing the Cl passivation locally using the STM. Al selective CVD produces 3 nm wires although the wires appear to be granular and sequential growth roughens the pattern. To improve the wire quality, we are now using selective Pd silicide growth by PVD. @FootnoteText@ @footnote 1@T-C. Shen, C. Wang, G. C. Abeln, J. R. Tucker, J. W. Lyding, Ph. Avouris, and R. E. Walkup, Science 268, 1590 (1995).