AVS 46th International Symposium
    Nanometer-scale Science and Technology Division Wednesday Sessions
       Session NS-WeM

Paper NS-WeM4
Nanolithography and Pattern Transfer of (110)-oriented Silicon Using Scanning Probe Lithography and Anisotropic Wet Etching

Wednesday, October 27, 1999, 9:20 am, Room 612

Session: Nanopatterning
Presenter: C.-L. Wu, National Tsing Hua University, Taiwan
Authors: C.-L. Wu, National Tsing Hua University, Taiwan
S.-S. Chien, National Chiao Tung University, Taiwan
W.-F. Hsieh, National Chiao Tung University, Taiwan
T.-T. Chen, National Tsing Hua University, Taiwan
Y.-C. Chou, National Tsing Hua University, Taiwan
S. Gwo, National Tsing Hua University, Taiwan
Correspondent: Click to Email
Recently, scanning probe lithography has became an emerging technology capable of fabricating sub-micron structures. We have demonstrated that silicon nanostructures (~60 nm lateral dimension) with high aspect ratios and large structural heights (~400 nm) may be fabricated by scanning probe lithography and aqueous KOH orientation-depentent etching on the H-passivated (110)Si wafer. The High spatial resolution of fabricated features is achieved by atomic force microscope based nano-oxidation process in ambient and anisotropic selective wet etching. Combining the large (110)/(111) anisotropic ratio of etch rate and large Si/SiO@sub2@ etch selectivity of aqueous KOH etching at an optimal concentration and a relatively low etching temperature, structural ridges of high-aspect-ratio and excellent parallelism as well as a hexagonal pit structure determined by the terminal etch geometry can be obtained. This method is potentially useful for simple and reliable high-packing-density and high-aspect-ratio micromachining on the nanometer scale.