AVS 46th International Symposium
    Nanometer-scale Science and Technology Division Monday Sessions
       Session NS-MoM

Paper NS-MoM11
One-dimensional Nanostructure of SiCN Single Crystal

Monday, October 25, 1999, 11:40 am, Room 6C

Session: Nanotechnology
Presenter: P.F. Kuo, National Taiwan University
Authors: P.F. Kuo, National Taiwan University
C.-Y. Wen, National Taiwan University
F.G. Tarntair, National Chio Tung University, Taiwan
J.-J Wu, Institute of Atomic and Molecular Sciences, Taiwan
S.L. Wei, Fu-Jen University, Taiwan
K.H. Chen, Academia Sinica, Taiwan
L.C. Chen, National Taiwan University
Y.F. Chen, National Taiwan University
Correspondent: Click to Email
Nanostructural materials have attracted wide attention due to its fundamental confinement effect and further applications of composites and microelectronics. From the standpoint of one-dimensional structures, there has been significant speculation about structures and properties of nanotubes and nanorods. In this paper, we report the growth of a novel one-dimensional single crystal nanorod comprised of Si, C, and N using microwave plasma enhanced chemical vapor deposition (MWCVD). The transmission electron microscopic analysis shows that the nanorods are of 1.5 µm in length and 50 nm in diameter, and the lattice images indicate that they are single crystals. High-resolution scanning electron microscope further confirms the nanorod diameter ranging from 10 to 60 nm, with hexagonal cross-section. The stoichiometry of the crystal was examined by the energy dispersive X-ray spectrometer (EDX) and the results showed a Si, C, N atomic ratio of 1:2:1. Detailed structural and stoichiometry information as well as optical and electronic properties measured by photoluminescence (PL) and electron field emission measurement are reported in this paper.