AVS 46th International Symposium
    Flat Panel Displays Topical Conference Monday Sessions
       Session FP+VT-MoM

Paper FP+VT-MoM2
Fabrication of a Well-Type Field Emission Device with a Tungsten Doped Zinc Oxide Thin Film Phosphor

Monday, October 25, 1999, 8:40 am, Room 604

Session: Field Emission Displays and Vacuum Packaging Issues
Presenter: V. Bhatia, Texas A&M University
Authors: V. Bhatia, Texas A&M University
J.B. Sobti, Texas A&M University
L.D. Karpov, Texas A&M University
M.H. Weichold, Texas A&M University
Correspondent: Click to Email
Interest in the area of the field emission displays (FEDs) exists because of combination of the positive features of a cathode ray tube with flat panel display technologies. High resolution at low cost, power efficiency at low voltage operations, wide viewing angles, and operation under variable temperatures are some of the important features of an FED. This paper reports the fabrication of a monochromatic display of blue light from a lateral edge well emitter. A high-resolution display has been fabricated using a blue phosphor developed at TAMU@footnote 1@ in conjunction with a well type edge field emission device designed by Karpov et al.@footnote 2@ The FED has been formed by constructing arrays of wells, having sides of a dielectric material above a matrix of anode lines. The anode lines lie underneath the phosphor. In the diode design of the device, cathode lines are fabricated by depositing metal-carbon-metal layers, atop the well sides, hanging slightly over the well edges. The FED design reported here provides an extra measure of brightness to the display by reflecting the light from anode lines out of well towards the viewer. Since the device eliminates the fabrication of microtips, the display involves simpler fabrication steps, more ruggedness, and stability than conventional FEDs. The phosphor being used in this display, has been fabricated by co-depositing zinc oxide and tungsten (ZnO:W). This phosphor has been reported to emit blue light at 490 nm when excited at 300 V.@footnote 3@ This paper presents ongoing research in integrating the ZnO:W phosphor in the well type edge field emission display. The fabrication steps involved in making the display device are presented as are emission properties and current-voltage characteristics to determine the performance of the display. @FootnoteText@ @footnote 1@Technology Disclosure to TAMU Technical Licensing Office (1993). @footnote 2@L. D. Kapov et al. 7th Int'l Vacuum Microelectronics Conf., France 1994. @footnote 3@J. B. Sobti et al. MRS meeting, Spring 1998.