AVS 46th International Symposium
    Flat Panel Displays Topical Conference Tuesday Sessions
       Session FP+OE+EM-TuA

Paper FP+OE+EM-TuA10
Solid-phase Crystallization of Hydrogenated Amorphous Silicon-Germanium Alloy Films

Tuesday, October 26, 1999, 5:00 pm, Room 604

Session: Thin Film Transistor Materials and Devices
Presenter: O.H. Roh, Chonbuk National University, Korea
Authors: O.H. Roh, Chonbuk National University, Korea
I.H. Yun, Chonbuk National University, Korea
J.-K. Lee, Chonbuk National University, Korea
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We have investigated the solid-phase crystallization of hydrogenated amorphous silicon-germanium alloy (a-Si@sub 1-x@Ge@sub x@:H) films by using electron spin resonance (ESR) and x-ray diffraction measurements. The films were deposited on Corning 1737 glass in a plasma-enhanced chemical vapor deposition system using SiH@sub 4@ and GeH@sub 4@ gases. The substrate temperature was 200°C and the r.f. power was 3W. The films were then annealed to be crystallized at 600°C in a N@sub 2@ atmosphere. The total spin density first increased with annealing time due to hydrogen evolution, and then rapidly decreased as the film was crystallized. The Ge dangling bond spin density increased faster with annealing time than the Si dangling bond spin density. However, it was observed that the H evolution from Si-H bond and Ge-H bond was strongly affected by the Ge composition of the films.