AVS 46th International Symposium
    Applied Surface Science Division Wednesday Sessions
       Session AS-WeA

Paper AS-WeA6
The Formation of Magnesium Oxide Layer using the MgO Precursor Solution and its Secondary Electron Emission

Wednesday, October 27, 1999, 3:40 pm, Room 6A

Session: Oxides and Insulators
Presenter: J.H. Lee, Samsung Advanced Institute of Technology, Korea
Authors: J.H. Lee, Samsung Advanced Institute of Technology, Korea
T.W. Jeong, Myong Ji University, Korea
S.G. Yu, Samsung Advanced Institute of Technology, Korea
H.W. Son, Samsung Advanced Institute of Technology, Korea
S.H. Jin, Samsung Advanced Institute of Technology, Korea
W. Yi, Samsung Advanced Institute of Technology, Korea
Y.S. Choi, Samsung Advanced Institute of Technology, Korea
D. Jeon, Myong Ji University, Korea
J.M. Kim, Samsung Advanced Institute of Technology, Korea
Correspondent: Click to Email
The thin layer magnesium oxide having a secondary electron emission coefficient (@delta@) value over 5 is obtained by a spin coating of the MgO precursor solution. The solutions are prepared as an aqueous base using magnesium formate and poly vinly alcohol, or as an organic base using magnesium acetate in 1,3-propanediol which is polymerized by magnesium methoxide. Alkali metal ions including Cs ion are doped by dissolving metal formate or acetate salts additionally in the above solutions. The firing condition, 450 C for 2 hours, is determined by the thermogravimetric analysis data of the dried bulk solution. The XRD measurement of the powder from a firing of the bulk solution at this temperature confirms the MgO crystal structure. The MgO films on Si(100) or ITO glass substrates prepared by a spin coating at 4000 rpm for 40 sec followed by firing at 450 C for 2 hours result in the thickness of 300 Å with a good roughness for a @delta@ value over 5. The doping effect of alkali metal ions of the MgO film is discussed on the regards of the secondary electron emission. The surface morphology and composition are characterized by SIMS, AFM, and SEM. This method allows an easy processing approach with a relatively high @delta@ value, as well as a variety of application into many kinds of structural device such as a microchannel plate with high aspect ratio.