AVS 46th International Symposium
    Applied Surface Science Division Tuesday Sessions
       Session AS-TuP

Paper AS-TuP17
The Develpment and Application of a High Speed Etching Source for Destructive Depth Profiling

Tuesday, October 26, 1999, 5:30 pm, Room 4C

Session: Poster Session
Presenter: A.J. Roberts, Kratos Analytical, UK
Authors: A.J. Roberts, Kratos Analytical, UK
C.J. Blomfield, Kratos Analytical, UK
S.C. Page, Kratos Analytical, UK
D.J. Surman, Kratos Analytical, UK
Correspondent: Click to Email
The development and application of a low energy argon ion beam source for destructive depth profiling, combined with X-ray photoelectron spectroscopy (XPS) are presented. This compact Kaufman ion source which combines extremely high sputter rates and low ion beam acceleration potentials, reduces ion induced mixing of the surface atoms. The properties of this ion source mean that concentration depth profiling through several hundred nanometer thick layers is possible, whilst retaining good interface resolution. Rotation of samples during sputter profiling is shown to improve interface resolution. The depth profiling capabilities of this high speed etching source will be demonstrated through a number of challenging samples. Atomic concentration profiles through a three layer sample have been performed as a function of ion acceleration voltages, and the effect on interface resolution is discussed. A further example of depth profiling through an inorganic material with a thin metal underlayer on polyester is shown. Chemical state information is retained from the inorganic oxide layer, with some reduction of the oxide layer observed due to the preferential sputtering of oxygen from the surface during profiling. Data presented shows no decrease in the sputter rate due to positive charging of electrically insulating samples during the sputtering process.