AVS 46th International Symposium
    Applied Surface Science Division Tuesday Sessions
       Session AS-TuP

Paper AS-TuP1
Pattern Measurements of Reticles with Optical Proximity Correction Assist Features Using the Atomic Force Microscope

Tuesday, October 26, 1999, 5:30 pm, Room 4C

Session: Poster Session
Presenter: R.J. Plano, Charles Evans & Associates
Authors: K.-J. Chao, Charles Evans & Associates
R.J. Plano, Charles Evans & Associates
J.R. Kingsley, Charles Evans & Associates
F. Chen, MicroUnity Systems Engineering, Inc.
R. Caldwell, MicroUnity Systems Engineering, Inc.
Correspondent: Click to Email
A 4X, 6-inch reticle with optical proximity correction (OPC) assist features intended for deep ultraviolet (DUV) exposure was investigated. A set of chrome lines with designed CD (linewidths in this case) from 0.24 to 2.00 microns was profiled by AFM. The goal of this work is to present a method to ensure consistent measurement of chrome lines widths on the reticle. This is done by consistently measuring the line width at the half-height position on the line cross-section, i.e., full width at half maximum (FWHM). defining the boundaries of the line width at the half height locations of the edge steps. Using this method, the CD linearity is found to be within ±20nm over a range of line widths from 2.00 um to 0.4 um. Additionally, the CD uniformity is found to be worse when the widths of the lines are nominally less than 0.4 um.