| AVS 45th International Symposium | |
| Electronic Materials and Processing Division | Tuesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:20am | EM+SE-TuM1 Invited Paper Gallium Nitride Structures for High Power Microwave Amplification L.F. Eastman, K. Chu, N. Weimann, J. Smart, J.R. Shealy, Cornell University |
| 9:00am | EM+SE-TuM3 HfN Films Grown on GaN by Reactive MBE using Ammonia@footnote 1@ A. Parkhomovsky, B.E. Ishaug, A.M. Dabiran, P.I. Cohen, University of Minnesota |
| 9:20am | EM+SE-TuM4 Investigation of Metal / GaN Interface Properties using Photoemission Spectroscopy and I-V Measurements C.I. Wu, A. Kahn, Princeton University |
| 9:40am | EM+SE-TuM5 Mg Doping Studies of ECR-MBE GaN Thin Films I.E. Berishev, E. Kim, O. Kameli, D. Starikov, A. Bensaoula, University of Houston |
| 10:00am | EM+SE-TuM6 Deposition of AlN Gate Dielectrics B. Gila, S.M. Donovan, C.R. Abernathy, K.N. Lee, J.D. MacKenzie, F. Ren, S.J. Pearton, University of Florida, Gainesville, S.N.G. Chu, Bell Laboratories, Lucent Technologies |
| 10:20am | EM+SE-TuM7 Invited Paper Progress in SiC: From Material Growth to Commercial Device Development C.H. Carter, V.F. Tsvetkov, D. Henshall, O. Kordina, K. Irvine, R. Singh, S.T. Allen, J. Palmour, Cree Research, Inc. |
| 11:00am | EM+SE-TuM9 Critical Development Issues for Deep (10 to 100 µm) Etching of SiC D.C. Sheridan, Auburn University, J.B. Casady, Northrop Grumman, C.E. Ellis, Auburn University, R.R. Siergiej, Northrop Grumman, J.D. Cressler, Auburn University, W.E. Urban, W.F. Valek, H. Buhay, Northrop Grumman |
| 11:20am | EM+SE-TuM10 Thermochemical Stability of Plasma-Deposited Silicon Oxycarbide Thin Films Subjected to Post-Deposition Rapid Thermal Annealing D.M. Wolfe, B. Ward, F. Wang, M. Xu, G. Lucovsky, R.J. Nemanich, D.M. Maher, North Carolina State University |