AVS 45th International Symposium
    Surface Science Division Tuesday Sessions
       Session SS3-TuA

Paper SS3-TuA10
Surface Modification on GaAs(110) Induced by 100-3000 eV Electrons

Tuesday, November 3, 1998, 5:00 pm, Room 314/315

Session: Photon- and Electron-Induced Chemistry
Presenter: B.Y. Han, University of Minnesota
Authors: B.Y. Han, University of Minnesota
K. Nakayama, University of Minnesota
J.H. Weaver, University of Minnesota
Correspondent: Click to Email
Atomic level modification of semiconductor surfaces induced by 100-3000 eV electrons is demonstrated for the first time. Scanning tunneling microscopy results reveal that single-layer deep vacancies are created randomly on GaAs(110) terraces under conditions typical for low-energy electron diffraction and Auger electron spectroscopy. Small regrowth structures resulting from Ga and As atoms ejected onto the terrace are observed. Surface modification is related to electronic excitations, and we discuss the mechanisms in view of the rate of production of defects at various electron energies. We also discuss the consequences of this electron-induced surface modification.