A detailed knowledge of the dynamical processes that occurs on surfaces has important implications for materials growth and processing. In the case of low temperature silcon growth hydrogen surface diffusion and desorption are key processes. However, little is known about the behavior of hydrogen on silicon surfaces at high temperatures. In this work we describe in detail the dynamical behavior of hydrogen on the Si(100) surface at temperatures between 600K and 750K. Our starting point for all these studies is a Si(100) surface that is completely terminated with hydrogen. At high temperatures H2 desorption occurs and the dangling bonds that result are initially localized on the same dimer unit. Even though this paired arrangement is stabilized by a weak pi interaction it soon dissociates due hopping of neighborng H atoms into these vacancy sites. Dangling bond motion is largely confined along the dimer row direction but steps act as turning points for this motion. We observe that dangling bonds recombine with surprising efficiency. A statistical analysis indicates that there are configurations other than the paired configuration that are stabilizing and that these promote dangling bond recombination. Missing dimer defects also act a recombination centers and effectively localize dangling bonds about them. Moreover, the residence times of dangling bonds at different surface locations provides a direct measure of the relative energies of the different sites on the Si(100)-2x1 surface.