AVS 45th International Symposium
    Surface Science Division Thursday Sessions
       Session SS-ThP

Paper SS-ThP10
Reconstructions of Ag on High-Index Silicon Surfaces

Thursday, November 5, 1998, 5:30 pm, Room Hall A

Session: Surface Science Division Poster Session
Presenter: S.R. Blankenship, Virginia Commonwealth University
Authors: S.R. Blankenship, Virginia Commonwealth University
H.H. Song, Virginia Commonwealth University
A.A. Baski, Virginia Commonwealth University
J.A. Carlisle, Virginia Commonwealth University
Correspondent: Click to Email
Si(5 5 12), a recently discovered, stable high-index surface of silicon, may offer a superior template for the growth of 1D metallic structures. This surface predominately consists of long pi-bonded Si rows. We are using Reflection High-Energy Electron Diffraction (RHEED) to determine the surface phase diagram of Ag on this surface, and the related surface of Si(337). Each of these surfaces exhibit a very sharp (2x1) reconstruction after flashing to ~1250°C. The growth of Ag on these surfaces is split into two distinct regimes. For growth at low coverages (@THETA@<0.25 ML) and relatively low growth temperatures (T<450°C), the 1x and 2x diffraction spots gradually fade and then the 1x spots sharpen slightly, as @THETA@ and T approach 0.25 ML and 450°C, respectively. A very weak 3x periodicity is observed along the row direction on these surfaces. STM results show that in this low @THETA@/T regime, Ag forms very long chains on top the pi-bonded Si chains on these surfaces. For slightly higher coverages (@THETA@>0.4 ML) and temperatures (450°C