AVS 45th International Symposium
    Organic Electronic Materials Topical Conference Tuesday Sessions
       Session OE+BI+EM-TuA

Paper OE+BI+EM-TuA9
The Adsorption of azo Compounds on Si(001)

Tuesday, November 3, 1998, 4:40 pm, Room 327

Session: Organic Thin Film Growth
Presenter: M.D. Ellison, University of Wisconsin, Madison
Authors: M.D. Ellison, University of Wisconsin, Madison
R.J. Hamers, University of Wisconsin, Madison
Correspondent: Click to Email
Recent investigations have demonstrated that unsaturated organic compounds can bond to the Si(001) surface by interaction of the C=C bond with the Si=Si dimers, forming a 4-member Si@sub 2@C@sub 2@ ring at the interface. We have investigated whether analogous reactions can be used to link azo bonds (N=N) to the Si(001) surface using XPS, FTIR, STM, and ab initio calculations. The experimental evidence indicates that the unsaturated N=N bond reacts with a Si=Si dimer in an analogous fashion to a [2+2] cycloaddition reaction, forming a 4-member Si@sub 2@N@sub 2@ ring. Although the thermal [2+2] reaction is forbidden by symmetry considerations, this and other studies have shown the reaction of unsaturated bonds with the Si(001) surface to be quite facile. The facility and selectivity of this reaction reveals the potential of azo compounds to be used in creating ordered organic layers on a Si(001) surface.