AVS 45th International Symposium
    Organic Electronic Materials Topical Conference Tuesday Sessions
       Session OE+AS+EM-TuM

Paper OE+AS+EM-TuM6
Interface Analysis of Naththyl-substituted Benzidine Derivative and tris-8(hydroxyquinoline) Aluminum Using Ultraviolet and X-Ray Photoemission Spectroscopy

Tuesday, November 3, 1998, 10:00 am, Room 327

Session: Organic Thin Film Interfaces
Presenter: E.W. Forsythe, University of Rochester
Authors: E.W. Forsythe, University of Rochester
V.-E. Choong, University of Rochester
C.W. Tang, Eastman Kodak Company
Y. Gao, University of Rochester
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The interface energy level alignment is a decisive factor in producing highly efficient organic light emitting diodes (OLEDs). We have studied the interface between naththyl-substituted benzidine derivative (NPB) and tris-8-(hydroxyquinoline) aluminum (Alq), a prototypical system used in OLEDs. The combination of ultraviolet photoemission and x-ray photoemission spectroscopy (UPS, XPS) allows us to distinguish contributions from NPB and Alq and obtain a detailed picture of the interface formation. The NPB coverages were deposited onto a 150 Å thick Alq film prepared insitu at 1x10@super -9@ Torr. The Alq and NPB HOMO levels are -1.7 eV and -1.4 eV, relative to the Fermi level, respectively. From the UPS difference spectrum, the gradual modification of the HOMO levels of NPB and Alq are revealed. The Alq HOMO level increases from -1.7 eV in the bulk to -1.8 eV with 2 Å of NPB. Likewise, the NPB HOMO level increases from -1.1 eV for the 5 Å coverage to -1.4 eV with 55 Å of NPB. The increases observed for the Alq and NPB HOMO levels are consistent with the vacuum level shift as well as the observed core level shifts from XPS. Further, the XPS results show no chemical interactions at the interface. This observed local interface formation region may contribute additional traps and energy barriers for carrier transport across the Alq/NPB interface. This work was supported by DARPA DAAL01-96-K-0086 and NSF DMR-9612370.