AVS 45th International Symposium
    Nanometer-scale Science and Technology Division Tuesday Sessions
       Session NS-TuA

Paper NS-TuA5
Self-Assembled Nanostripes on Silicon

Tuesday, November 3, 1998, 3:20 pm, Room 321/322/323

Session: Quantum Wires and Quantum Dots
Presenter: D.Y. Petrovykh, University of Wisconsin, Madison
Authors: D.Y. Petrovykh, University of Wisconsin, Madison
J. Viernow, Universität Hannover, Germany
J.-L. Lin, University of Wisconsin, Madison
F.M. Leibsle, University of Missouri, Kansas City
F.-K. Men, National Chung Cheng University,Taiwan, R.O.C.
A. Kirakosian, University of Wisconsin, Madison
F.J. Himpsel, University of Wisconsin, Madison
Correspondent: Click to Email
We report on the successful fabrication of one-dimensional structures on silicon with sizes of a few nanometers. As templates we use stepped Si(111)7x7 surfaces, which can be prepared with high precision (only one kink in 20,000 edge sites).@footnote 1@ On top of such a template, CaF@sub 2@ stripes are produced by step flow growth. They play the role of a photoresist in nanolithography. Various growth modes of CaF@sub 2@ are found by chemically-sensitive scanning tunneling microscopy, including a regime at 600-650@super o@C where regular, 10 nm wide stripes are formed and a second regime at 700-750@super o@C where the stripes break apart spontaneously into strings of 10 nm diameter dots. Chemical sensitivity to CaF@sub 2@ is achieved in STM via current images at a bias voltage where electrons from the tip tunnel into the band gap of CaF@sub 2@. After producing passivating CaF@sub 2@ stripes, metallic wires are to be deposited on the remaining reactive silicon, e.g., by selective CVD, electroplating or evaporation and diffusion off the CaF@sub 2@. Test experiments on these processes will be reported. @FootnoteText@ @footnote 1@J. Viernow, J.-L. Lin, D. Y. Petrovykh, F. M. Leibsle, F. K. Men, and F.J. Himpsel, Appl. Phys. Lett. 72, 948 (1998) @footnote 2@J.-L. Lin, D. Y. Petrovykh, J. Viernow, F. K. Men, D. J. Seo, and F.J. Himpsel, J. Appl. Phys. 84, July 1 (1998)