AVS 45th International Symposium
    Nanometer-scale Science and Technology Division Thursday Sessions
       Session NS-ThA

Paper NS-ThA8
Modifications of Thioaromatic Monolayers by Low Energy Electrons

Thursday, November 5, 1998, 4:20 pm, Room 321/322/323

Session: Nanoscale Manipulation and Chemical Modification
Presenter: A. Gölzhäuser, Universität Heidelberg, Germany
Authors: W. Geyer, Universität Heidelberg, Germany
V. Stadler, Universität Heidelberg, Germany
W. Eck, Universität Heidelberg, Germany
M. Zharnikov, Universität Heidelberg, Germany
A. Gölzhäuser, Universität Heidelberg, Germany
M. Grunze, Universität Heidelberg, Germany
Correspondent: Click to Email
Electron induced modifications of aromatic self-assembled monolayers (SAMs) were investigated by x-ray photoelectron (XPS) and near edge x-ray absorption fine structure (NEXAFS) spectroscopy. SAMs of 1,1'-biphenyl-4-thiol (BP), 4'-nitro-1,1'-biphenyl-4-thiol (NBP) and 4'-amino-1,1'-biphenyl-4-thiol (ABP) were prepared on (111) textured gold surfaces. The subsequent characterization indicated that the films were well ordered. The films were then irradiated with low energy electrons (20 - 300 eV) and changes were observed in situ. Biphenyl SAMs are generally more stable to low energy electrons than alkanethiols exposed under similar conditions. The functionalized biphenyls (NBP, ABP) showed distinct differences in the reactions of their end groups with the incident electrons. Mechanisms of interactions between the electrons and the SAMs as well as possible applications in the tailoring of surfaces for electron beam lithography will be discussed.