AVS 45th International Symposium
    Nanometer-scale Science and Technology Division Thursday Sessions
       Session NS-ThA

Paper NS-ThA7
Nano Scale Selective Al Growth on the Si(001)-H Surface using Dimethylethyamine Hydride

Thursday, November 5, 1998, 4:00 pm, Room 321/322/323

Session: Nanoscale Manipulation and Chemical Modification
Presenter: T. Mitsui, University of Minnesota
Authors: T. Mitsui, University of Minnesota
E. Hill, University of Minnesota
E. Ganz, University of Minnesota
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I will discuss nano-scale selective growth of Al on a hydrogen patterned Si(001) surface. We have studied Al growth on the clean and mono-hydride terminated Si(001) surface over a range of temperatures using Dimethylethyamine Hydride (DMAH). We have found that Al growth occurs upon dosing the clean Si(001) surface heated above 150 °C but does not occur on a mono-hydride Si(001) surface up to 300 °C. Patterning a mono-hydride terminated Si(001) surface with the STM tip,@footnote 1@ we have created nano-scale regions of bare Si(001). Heating this surface to 200 °C and dosing with DMAH, we observe the selective growth of Al from DMAH on the clean silicon region. The mechanism for selectivity will be discussed. @FootnoteText@ @footnote 1@Lyding et al, Science. 268 (1995) 1590