AVS 45th International Symposium
    Magnetic Interfaces and Nanostructures Technical Group Tuesday Sessions
       Session MI-TuA

Paper MI-TuA9
Epitaxial Growth of Co Layers on Sb-passivated GaAs(110) Substrates

Tuesday, November 3, 1998, 4:40 pm, Room 324/325

Session: Emerging Materials and Hybrid Structures
Presenter: M. Martin, LURE, Centre Universitaire Paris Sud and ICMM, France
Authors: M. Martin, LURE, Centre Universitaire Paris Sud and ICMM, France
C. Teodorescu, LURE, Centre Universitaire Paris Sud and ICMM, France
H. Ascolani, Centro Atomico Bariloche, Argentina
J. Chrost, LURE, Centre Universitaire Paris Sud and ICMM, France
J. Avila, LURE, Centre Universitaire Paris Sud and ICMM, France
M.C. Asensio, LURE, Centre Universitaire Paris Sud and ICMM, France
Correspondent: Click to Email
The growth of magnetic epitaxial layers on semiconductors has attracted considerably attention since it allows the integration of low dimensional magnetic materials with the silicon technology. The largest body of work has been focused to the magnetic 3d transition metals and the zinc blende semiconductors, which have similar lattice constants . In practice, however, the growth of transition metals on semiconductor substrates is difficult due to intrinsic surface states present at the gap of the semiconductors which dominate the electronic and reactivity of the interfaces. Pervious studies on Co/GaAs(110) have indicated that BCC Co can be grown epitaxially for thicknesses up to 300 Å. However, the metallic films are not flat and the As interdiffusion modifies the magnetic properties of the Co overlayer. In this work, we present new results of the growth of Co on a pervious Sb-GaAs(110) passivated surface, where the interdiffusion process is dramatically reduced and the quality of the metallic Co overlayer enhanced. The reactivity of the interface has been tested at different temperature and coverage conditions by high energy resolution synchrotron radiation photoemission and the morphology of the metallic overlayer determined by photoelectron diffraction.