AVS 45th International Symposium
    Applied Surface Science Division Monday Sessions
       Session AS-MoP

Paper AS-MoP2
Characterization of Shallow Implants with SIMS using Electron Beam Oxidation

Monday, November 2, 1998, 5:30 pm, Room Hall A

Session: Aspects of Applied Surface Science Poster Session
Presenter: M. Puga-Lambers, University of Florida, Gainesville
Authors: M. Puga-Lambers, University of Florida, Gainesville
P.H. Holloway, University of Florida, Gainesville
Correspondent: Click to Email
Secondary ion mass spectrometry (SIMS) depth profiles of boron shallow implants in silicon have been measured with a quadrupole Perkin-Elmer 6600 PHI SIMS system. Oxygen backfill from the base pressure (10@super -10@ Torr) to 10@super -6@ Torr was applied in conjunction with oxygen bombardment. Silicon wafers implanted with 8 keV As and 5 keV and 0.5 keV B to doses of 3, 5 and 1 x10@super 15@ cm@super -2@, respectively were analyzed. Maximum peak concentrations were about 2.5x10@super 21@ cm@super -3@ for As, and 1.5x10@super 21@ cm@super -3@ and 1.0x10@super 21@ cm@super -3@ for B, respectively. The peak maxima were located at 10 nm, 22 nm and 3 nm for As at 8KeV and B at 5 KeV and 0.5 keV, respectively. Oxygen backfill improved the depth resolution but degraded the dynamic range of 0.5 keV B implants by about half an order of magnitude. Simultaneous electron bombardment during oxygen backfill and during depth profiling further improved the depth resolution while maintaining the dynamic range of the SIMS analysis as measured both by the surface transients in the Si@super +@ and SiO@super +@ substrate as well as the B@super +@ signal. In addition, analysis of both the Si@super +@ and SiO@super +@ transients demonstrated that the extent of surface oxidation during oxygen backfill was accelerated by simultaneous electron bombardment. The prospects for further improvement in this technique for shallow implant profiles will be discussed.