High dielectric constant sputtered thin films of Ba@sub x@Sr@sub 1-x@TiO@sub 3@ are being developed for use in the storage capacitors of high density microelectronic memory circuits. The correlation of the electrical characteristics of such capacitors with the compositional and structural properties of the Ba@sub x@Sr@sub 1-x@TiO@sub 3@ films is key to optimizing device and circuit performance. This paper gives a detailed description of the methodology developed to provide quantitative Auger depth profiles with high resolution and high precision. Data will be shown giving the optimum angles of incidence for best depth resolution when sputtering with both Ar and Xe ions. Sputter rates versus angle of incidence will be provided for both Ar and Xe at 1.0 keV. Variations in sputter rate and Auger sensitivity factors with variations in composition between x=0 and x=0.7 will be presented. The Auger analysis provides insight into the accuracy of BST thin film stoichiometry measurements made by x-ray fluorescence and Rutherford backscattering techniques, and a discussion of the issues involved will be provided.