Paper TF-WeP36
Ultrafast and Highly-Scalable Organic-Inorganic Hybrid Perovskite Memory Devices for Emerging Memory Applications

Wednesday, December 5, 2018, 4:00 pm, Room Naupaka Salon 1-3

Organic-inorganic hybrid perovskites (OIHPs) have been used as the switching layers in resistive switching memory (RSM) devices due to distinct property of hysteresis in current-voltage (I-V) curves caused by defect migration under electric field [1-3]. For practical memory applications OIHPs are required to be prepared by vacuum deposition with good uniformity. We proposed a high-performance CH3NH3PbI3 (MAPI)-based RSM device utilizing sequential vapor deposition to achieve high-density memory applications [4]. MAPI-based nanoscale RSM and cross-point array structure were fabricated to show the feasibility of OIHP-based memory with high-density data storage. Sequential vapor deposition enabled MAPI layer to be deposited inside the nanotemplates with 250 nm via-hole structures on the silicon wafers. The MAPI-based nanoscale memory showed low operating voltage, good endurance, and long data retention. Additionally, our devices showed sub-microsecond switching speed under ac bias pulses. The memory element of MAPI-based cross-point array structure showed bipolar resistive switching. This work on preparing OIHP-based nanoscale devices and the cross-point array structure will be an important step in the development of OIHPs for high-capacity information storage and for suggesting a novel approach that can be used to apply OIHPs to real memory devices on a large scale. Finally, lead-free, air-stable OIHP-based RSM with ultrafast switching and multilevel data storage capability will be introduced.

[1] C. Gu and J.-S. Lee, ACS Nano 10, 5413 (2016)

[2] B. Hwang, C. Gu, D. Lee, and J. –S. Lee, Scientific Reports 7, 43794 (2017).

[3] B. Hwang and J. –S. Lee, Scientific Reports 7, 673 (2017).

[4] B. Hwang and J. –S. Lee, Advanced Materials 29, 1701048 (2017).