| Pacific Rim Symposium on Surfaces, Coatings and Interfaces (PacSurf 2018) | |
| Thin Films | Wednesday Sessions |
| Session TF-WeM |
| Session: | Nanostructural and Surface Morphological Evolution: Experiment and Theory |
| Presenter: | Gregory Abadias, Institut Pprime, CNRS-Université de Poitiers, France |
| Authors: | G. Abadias, Institut Pprime, CNRS-Université de Poitiers, France C. Furgeaud, Institut Pprime, CNRS-Université de Poitiers, France B. Krause, KIT, Germany A. Jamnig, Institut Pprime, CNRS-Université de Poitiers and IFM Linköping University, Sweden K. Sarakinos, Linköping University, Sweden J.J. Colin, Institut Pprime, CNRS-Université de Poitiers, France L. Simonot, Institut Pprime, CNRS-Université de Poitiers, France A. Michel, Institut Pprime, CNRS-Université de Poitiers, France C. Mastail, Institut Pprime, CNRS-Université de Poitiers, France |
| Correspondent: | Click to Email |
Thin metallic films deposited on Si are still largely used in many technological areas, such as microelectronics, catalysis, architectural glazing or plasmonics. In the case of high-mobility metals on weakly interacting substrates (e.g. Ag on SiO2), the growth proceeds in a 3D fashion, known as Volmer-Weber. The control of islands size and shape at the beginning of growth is vital for many applications as the characteristic length scales and physical attributes of ultrathin films are mostly set-in during the coalescence stage.
By employing a panel of in situ and real-time diagnostics, we could obtain valuable insights on the thin film growth dynamics, as well as stress evolution, in a variety of sputter-deposited metallic systems (Ag, Cu, Au, Pd and Mo). More particularly, the characteristic thickness of film percolation and film continuity can be determined from a combination of real-time electrical resistivity and wafer curvature measurements. This will be highlighted for the case of Ag and Cu deposited on amorphous carbon as a function of deposition rate F and deposition temperature Ts.
We will also provide examples on how chemical alloying or interface reactivity can affect the growth morphology and stress evolution of Ag and Cu films. Growth monitoring was performed in situ by employing either surface differential reflectance spectroscopy or spectroscopic ellipsometry. We will show that strategies based on interfacial or alloying design can be efficiently employed to manipulate growth and obtain ultra-thin, ultra-smooth, continuous layers.
Finally, we will discuss the case of silicide formation during growth of metal layers with lower adatom mobility (e.g. Mo) on silicon. By coupling simultaneously X-ray diffraction, X-ray reflectivity and wafer curvature during sputter-deposition of metal layers on amorphous Si, information about thickness-dependent crystalline phases, texture, grain growth and microstrain can be gained. This will be demonstrated for Mo/Si and Pd/Si systems. A complex nanostructure formation is uncovered from these synchrotron studies, pointing out to different silicide formation mechanisms and subsequent structural development.