Pacific Rim Symposium on Surfaces, Coatings and Interfaces (PacSurf 2018)
    Thin Films Tuesday Sessions
       Session TF-TuP

Paper TF-TuP8
Thermal Stability of Atomic Layer Deposition Precursors

Tuesday, December 4, 2018, 4:00 pm, Room Naupaka Salon 1-3

Session: Thin Films Poster Session I
Presenter: Kyuyoung Heo, Korea Research Institute of Chemical Technology, Republic of Korea
Authors: K. Heo, Korea Research Institute of Chemical Technology, Republic of Korea
J. Son, Korea Research Institute of Chemical Technology, Republic of Korea
G. Jung, Korea Research Institute of Chemical Technology, Republic of Korea
W. Lee, Korea Research Institute of Chemical Technology, Republic of Korea
Correspondent: Click to Email

The development of high-k dielectric precursors for advanced semiconductor applications requires molecular engineering and chemical tailoring to obtain specific physical properties and performance capabilities. Some high-k precursors such as organometallic precursors for atomic layer deposition (ALD) that have metal atoms bound to cyclopentadienyl, are stored at a sufficiently high temperature due to their low volatility and consumed through continuous deposition for a commercial semiconductor process. In this case, thermal degradation slowly occurs due to storage at a high temperature for a long time, which causes deterioration of physical properties and reliability of the thin film. However, a technique for assessing the reliability of precursor has been undeveloped and thus causing the development of new precursors to be delayed. In this study, we have developed a reliability evaluation method for cyclopentadienyl tris(dimethylamino) zirconium [CpZr(NMe2)3] through accelerated thermal degradation test under severe environmental conditions in a short period of time. To evaluate the lifetime of precursor, we have investigated the thermal stability and degradation mechanism of precursor by using analysis of NMR and mass and viscosity measurements.