| Pacific Rim Symposium on Surfaces, Coatings and Interfaces (PacSurf 2018) | |
| Thin Films | Tuesday Sessions |
| Session TF-TuM |
| Session: | Innovations in the Development of Multifunctional Thin Films |
| Presenter: | Alberto Herrera-Gomez, CINVESTAV-Unidad Queretaro, Mexico, México |
| Authors: | J.A. Torres-Ochoa, CINVESTAV-Unidad Queretaro, Mexico O. Cortazar-Martinez, CINVESTAV-Unidad Queretaro, Mexico M. Mayorga-Garay, CINVESTAV-Unidad Queretaro, Mexico A De Luna Bugallo, CINVESTAV-Unidad Queretaro, Mexico Y. Chipatecua-Godoy, CINVESTAV-Unidad Queretaro, Mexico O. Ceballos-Sanchez, CINVESTAV-Unidad Queretaro, Mexico D. Silva-Cabrales, CINVESTAV-Unidad Queretaro, Mexico F. Corona-Davila, CINVESTAV-Unidad Queretaro, Mexico J. Raboño-Borbolla, CINVESTAV-Unidad Queretaro, Mexico A. Herrera-Gomez, CINVESTAV-Unidad Queretaro, Mexico, México |
| Correspondent: | Click to Email |
The nitridation of hafnia is attractive because it improves its dielectric properties and minimize its crystallization. The thermal budget employed might be large when nitridation is carried out through rapid thermal annealing [1]. Ultraviolet-assisted nitridation might be carried out at lower temperatures; however, N-O species dominates the N 1s spectrum [2], affecting the dielectric quality. These species are also present when the nitridation is carried out through decoupled-plasma processing [3] and can only be removed through high-temperature annealing.
We have developed a low-temperature nitridation process that minimize the formation of N-O species. It also minimizes the formation of a hafnium silicate interface layer in hafnia/Si structures [4]. It is based on remote-plasma employing a gas-mixture. The structure of the multilayer films was characterized through ARXPS, and the effect on the dielectric properties through I-V and C-V curves.
[1] S.Y. Son, P. Kumar, J.S. Lee, R.K. Singh, High efficiency nitrogen incorporation technique using ultraviolet assisted low temperature process for hafnia gate dielectric, Appl. Phys. Lett. 92 (2008). doi:10.1063/1.2892040.
[2] K. Ramani, C.R. Essary, V. Craciun, R.K. Singh, UV assisted oxidation and nitridation of hafnia based thin films for alternate gate dielectric applications, Appl. Surf. Sci. 253 (2007) 6493–6498. doi:10.1016/j.apsusc.2007.01.027.
[3] G. Saheli, W. Liu, C. Lazik, Y. Uritsky, M. Bevan, W. Tang, P. Ma, E. Venkatasubramanian, S. Bobek, P. Kulshreshtha, C.R. Brundle, Characterization of film materials in wafer processing technology development by XPS, J. Electron Spectros. Relat. Phenomena. (2018). doi:10.1016/j.elspec.2018.03.007.
[4] P.G. Mani-Gonzalez, M.O. Vazquez-Lepe, A. Herrera-Gomez, Aperture-time of oxygen-precursor for minimum silicon incorporation into the interface-layer in atomic layer deposition-grown HfO 2 /Si nanofilms, J. Vac. Sci. Technol. A Vacuum, Surfaces, Film. 33 (2015) 010602. doi:10.1116/1.4904496.