| Pacific Rim Symposium on Surfaces, Coatings and Interfaces (PacSurf 2018) | |
| Thin Films | Thursday Sessions |
| Session TF-ThM |
| Session: | Nanostructured Surfaces and Thin Films: Synthesis and Characterization III |
| Presenter: | Balaji Gururajan, PSG College of Technology, India |
| Authors: | B. Gururajan, PSG College of Technology, India B. Rangasamy, PSG College of Technology, India P. Sankaran, PSG College of Technology, India P. Nagarajan, PSG College of Technology, India S. Kaliappan, PSG College of Technology, India K.M. Dhonan, PSG College of Technology, India V. Asokan, Chalmers University of Technology, Sweden M. Natarajan, Coimbatore Institute of Technology, India D. Velauthapillai, Western Norway University of Applied Sciences, Norway |
| Correspondent: | Click to Email |
Cadmium Sulphide (CdS) thin films were deposited onto well-cleaned soda lime glass substrates using hot wall deposition technique at room temperature. The structure of the as-deposited CdS thin films was found to be hexagonal and oriented along <0 0 2> direction. The CdS films were then annealed to 300 oC and crystallinity of the films was found to improve with the presence of additional diffraction peaks along <0 0 2>, <1 0 1>, <1 0 2>, <1 1 2> directions. Raman Spectroscopy of the annealed films confirmed the hexagonal structure with a shift observed at 312 cm-1. Selected area electron diffraction (SAED) pattern acquired from transmission electron microscopy analysis substantiated the hexagonal phase formation. X-ray photoelectron spectroscopy (XPS) confirmed the stochiometric nature of CdS thin films with Cd:S atomic ratio of 1. Field emission scanning electron microscopy (FESEM) images revealed smooth morphology of the CdS films with distinctive grains. Atomic force microscopy (AFM) results indicated a surface roughness of 4.47 nm. Transmission spectra of the films were studied and the transparency was found to be above 80%. The optical band gap was found to be around 2.4 eV in accordance with the reported values. The results obtained clearly show that device quality CdS buffer layers can be effectively deposited using Hot-wall deposition.