| Pacific Rim Symposium on Surfaces, Coatings and Interfaces (PacSurf 2018) | |
| Thin Films | Thursday Sessions |
| Session TF-ThM |
| Session: | Nanostructured Surfaces and Thin Films: Synthesis and Characterization III |
| Presenter: | Juan Luis Peña, CINVESTAV-Unidad Mérida, Mexico |
| Authors: | J. Ríos-González, CINVESTAV-Unidad Mérida, Mexico R.J. Mis-Fernández, CINVESTAV-Unidad Mérida, Mexico I. Rimmaudo, CINVESTAV-Unidad Mérida, Mexico E. Camacho-Espinosa, CINVESTAV-Unidad Mérida, Mexico J.L. Peña, CINVESTAV-Unidad Mérida, Mexico |
| Correspondent: | Click to Email |
The doping of CdTe has been investigated with different materials such as Sb, As, Mg, Se, Bi. Sn-doped CdTe is a promising intermediate band photovoltaic material, therefore the optoelectronic and structural properties have been investigated in this work. Tin was co-sublimated with CdTe films by close-spaced sublimation (CSS) process in Ar environment to avoid Sn oxidation. CdTe:Sn was deposited on a superstrate structure, glass/ITO/ZnO/CdS, and Cu/Mo bi-layer was used as back contact. The amount of tin doping was kept constant. Well shaped and uniform grains were found by Field Emission Scanning Electron Microscopy (FE-SEM) analysis (about ~ 3 µm). Also it was observed a morphological changes between as-deposited CdTe and Sn-doping CdTe. Energy Dispersive X-ray Spectroscopy (EDS) and X-ray Photoelectron Spectroscopy (XPS) showed presence of tin in the CdTe films. Xrays Diffraction (XRD) revealed peaks corresponding to the SnTe compound, as well as CdTe peaks strongly orientated along the (220) and (311) directions. The CdTe:Sn and as-deposited films showed a band gap of 1.49 eV. The measured efficiency of CdTe:Sn solar cell was 5.4%.