| Pacific Rim Symposium on Surfaces, Coatings and Interfaces (PacSurf 2018) | |
| Thin Films | Thursday Sessions |
| Session TF-ThM |
| Session: | Nanostructured Surfaces and Thin Films: Synthesis and Characterization III |
| Presenter: | Takhee Lee, Seoul National University, Republic of Korea |
| Correspondent: | Click to Email |
Transition metal dichalcogenide (TMD) two-dimensional (2D) atomic layered materials have recently drawn considerable attention as promising semiconductors for future ultrathin layered nanoelectronic device applications. Unlike graphene, TMD materials have a semiconductor band gap, for example, molybdenum disulfide (MoS2) that has been widely studied is known to have a direct band gap of ~1.9 eV as a single MoS2 layer and an indirect band gap of ~1.2 eV as a bulk MoS2 crystal.
In this talk, I will present our group research works on MoS2-based nanoelectronic devices. In particular, I explain the following topics on the electrical properties of MoS2 FETs; the effect by the environments such as oxygen and water [1], gate bias stress-dependent device instability [2], interface control by high energetic proton beam irradiation [3], surface treatment by molecules for sulfur vacancy passivation of MoS2 [4], and hybrid devices of organic materials and MoS2 [5].
References
[1] W. Park et al., Nanotechnology, 24, 095202 (2013)
[2] K. Cho et al., ACS Nano, 7, 7751 (2013).
[3] T.-Y. Kim et al., ACS Nano, 8, 2774 (2014).
[4] K. Cho et al., ACS Nano, 9, 8044 (2015); K. Cho et al. Adv. Mater. 30, 1705540 (2018).
[5] J.-K. Kim et al., Scientific Reports, 6, 36775 (2016); J. Pak et al., Nanoscale, 7, 18780 (2015).