| Pacific Rim Symposium on Surfaces, Coatings and Interfaces (PacSurf 2018) | |
| Thin Films | Monday Sessions |
| Session TF-MoM |
| Session: | Nanostructured Surfaces and Thin Films: Synthesis and Characterization I |
| Presenter: | Wan Oh, Sungkyunkwan University, Republic of Korea |
| Authors: | W. Oh, Sungkyunkwan University, Republic of Korea W. Lee, Sungkyunkwan University, Republic of Korea S. Choi, Sungkyunkwan University, Republic of Korea Y. An, Sungkyunkwan University, Republic of Korea C. Lee, Sungkyunkwan University, Republic of Korea S. Wi, Sungkyunkwan University, Republic of Korea H.S. Kim, Sungkyunkwan University, Republic of Korea |
| Correspondent: | Click to Email |
The ZrO2 thin films have been actively used as a dielectric material in various nanoelectronic devices, such as transistors and memories. In achieving excellent electrical performance, uniformity, and step coverage, atomic layer deposition (ALD) is the most perfect method. Consequently, development of the ALD ZrO2 process itself as well as dielectric engineering (nanolaminating or alloying with other dielectrics) have been largely researched to lower the leakage current while taking advantage of its relatively high dielectric constant [1].
In this study, the ALD ZrO2 thin films were deposited using Cp-Zr(NMe2)3 as a Zr precursor, and the effects of oxidant (H2O, O3) and deposition temperature (200-300°C) on their electrical properties were systematically studied. Metal-insulator-metal capacitors were fabricated and their electrical properties, such as capacitance and leakage current, were evaluated. In addition, the physical properties of the ZrO2 thin films were compared by examining them using transmission electron microscopy, atomic force microscopy, and X-ray diffractometry. Lastly, the ALD ZrO2 films were applied to a stacked structure of ZrO2/Al2O3/ZrO2, which has been popularly used in memory devices and their electrical properties were evaluated.
[1] D. Panda and T.-Y. Tseng, Thin Solid Films 531, 1 (2013).