| Pacific Rim Symposium on Surfaces, Coatings and Interfaces (PacSurf 2018) | |
| Plasma Processing | Thursday Sessions |
| Session PS-ThM |
| Session: | Plasma Processing |
| Presenter: | David Ruzic, University of Illinois at Urbana-Champaign |
| Authors: | D.N. Ruzic, University of Illinois at Urbana-Champaign D.E. Barlaz, University of Illinois at Urbana-Champaign J. Mettler, University of Illinois at Urbana-Champaign G. Panici, University of Illinois at Urbana-Champaign D. Qerimi, University of Illinois at Urbana-Champaign |
| Correspondent: | Click to Email |
After presenting a brief overview of the uses of plasmas to make microelectronics, the talk will focus in on metal surface wave plasmas (MSWP). These plasmas have characteristics which make them ideal for many applications. They are microwave driven, and can be launched from a number of antenna or window-like structures. If the plasma density is above cut-off, the waves are completely absorbed in the plasma sheath, spreading out along the surfaces adjacent to the launcher. In this way, a plasma can be made which hugs surfaces. This is ideal for processing of that surface. For instance, when trying to etch Sn from an EUV mirror, making a H plasma right along the mirror surface creates the active radicals which do the etching directly where they are needed.
There is a second advantage of MSWP for processing. While the first couple of mm near the surface are immersed in a higher temperature (4 eV) and density (1e12 cm-3) plasma, the region many cm above the surface contains a cold (1 eV) plasma which is still fairly dense (1e11 cm-3). The two distinct plasma regions created by the same source can be quite useful. If one wants to “crack’ the gas used for atomic-layer processing, pass it through the surface and the dense plasma. If the desire is to not break up the molecules, inject it down stream. The advantages of having a plasma in contact with the substrate are retained in both cases. This talk will show examples of using such plasmas for both etching and deposition.