Low-energy electron microscopy (LEEM) is a spectromicroscopy technique, which allows the study of dynamic processes at surfaces and interfaces, such as thin-film growth, surface reactions, and phase transitions. With the FE-LEEM P90 from SPECS, which is based on the instrument design by Rudolf Tromp from IBM, lateral and energy resolution of below 5 nm and 250 meV, respectively, can be achieved. Depending on the excitation source and the settings on the instrument a variety of different imaging modes are possible: mirror electron microscopy, low energy electron diffraction (LEED), phase contrast imaging, reflectivity contrast, dark field imaging and bright field imaging, as well as photoelectron emission microscopy and spectroscopy. As a new development the technical capabilities of LEEM and PEEM have been extended towards near ambient conditions by developing a special objective lens concept and sample chamber geometry. This enables the analysis of materials and devices under near ambient conditions and even in situ during operation. For this a Laser heater allows for sample temperatures up to 800°C during the measurements. The technical realization will be presented in detail. Furthermore experimental results will be shown on Graphene, Silicon under Nitrogen atmosphere. First results from real surface reactions will be discussed.