| Pacific Rim Symposium on Surfaces, Coatings and Interfaces (PacSurf 2018) | |
| Nanomaterials | Tuesday Sessions |
| Session NM-TuM |
| Session: | Nanofabrication and Nanodevices |
| Presenter: | Gunuk Wang, Korea University, Republic of Korea |
| Correspondent: | Click to Email |
The two-terminal oxide-based memristive switch is garnering enormous interest for the development of next-generation nonvolatile memory beyond current Si-based memory technology and is concurrently considered as an artificial synapse candidate for the neuromorphic computing hardware. In this talk, I will introduce a breakthrough and attractive approach, that is utilized a nanoporous oxide structure as a switching medium, for fabricating simple and cost-efficient high-density memory arrays with acceptable switching performances, low power consumption, and low electroforming voltage (or forming-free). I will talk a topic about the single nanopore (SNP)-based SiOx memories that enable unipolar switching through its internal vertical nanogap, which outperforms the switching ability of any other unipolar memory [1-3]. As a second part, I will briefly introduce our recent approaches and achievements for the neuromorphic device technology using two-terminal self-rectifying memristor synapse employing a Pt/Ta2O5-y/nanoporous (NP) Ta2O5-x/Ta layers [4,5].
References ：
[1] S. Kwon et al., Nano Lett, 2017, 17, 7462.
[2] G. Wang et al., Nano Lett. 2014, 14, 4694.
[3] G. Wang et al., ACS Nano, 2014, 8, 1410.
[4] W. Huh et al., Adv, Mater. In press 2018.
[5] S. Jang et al., under review 2018.