Invited Paper NM-TuE4
Extending Compound Semiconductor Nanowire Functions by the Introduction of Additional Elements

Tuesday, December 4, 2018, 6:40 pm, Room Naupaka Salon 5

Semiconductor nanowires are promising as building blocks in nanoelectronics and nanophotonics. The introduction of III–V compound semiconductor heterostructures into NWs provides dynamic control for the electronic band structure of these systems. On the other hand, oxides displaying advantageous dielectric, thermal, and resistive properties, which cannot be achieved in semiconductors, make their combination with semiconductors appealing. GaAs and related heterostructure have realized various optical and electronic devices with high speed and efficiency, e. g., transistors, lasers, and solar cells. To extend the functions of the materials system, diluted nitride and bismide has been paid attention over the past decade. They can largely decrease the band gap of the alloys, providing the greater tunability of band gap and strain status, eventually suppressing the non-radiative Surface and/or Auger recombinations. Selective wet oxidation for Al-rich AlGaAs is a vital technique for vertical surface emitting lasers. That enables the introduction of precisely controlled oxides in the system, enabling the optical and electrical confinement, heat transfer, and mechanical robustness.

We introduce the above materials into GaAs nanowires.[1] GaAs/GaAsN core-shell nanowires showed clear redshift of the emitting wavelength toward infrared regime. Further, the N introduction passivates non-radiative surface recombination, demonstrating laser emission from the single nanowire.[2,3] GaAs/GaAsBi core-shell structure was also obtained, showing a characteristic modification of the nanowire morphology.[4] Selective and whole oxidations of GaAs/AlGaAs core-shell nanowires produce semiconductor/oxide composite GaAs/AlGaOx. Possibly sourced from molecular species, the oxide shell shows white luminescence. [5,6]

[1] Ed. F. Ishikawa and I. A. Buyanova, Novel Compound Semiconductor Nanowires: Materials, Devices and Applications, Pan Stanford Publishing, 2017. [2] M. Yukimune, R. Fujiwara, H. Ikeda, K. Yano, K. Takada, M. Jansson, W. M. Chen, I. A. Buyanova, F. Ishikawa, Appl. Phys. Lett. 113, 011901, 2018 [3] S. Chen, M. Jansson, J. E. Stehr, Y. Huang, F. Ishikawa, W. M. Chen, I. A. Buyanova, Nano Lett. 17, 1775. [4] F. Ishikawa, Y. Akamatsu, K. Watanabe, F. Uesugi, S. Asahina, U. Jahn, and S. Shimomura, Nano Lett. 15, 7265, 2015. [5] H. Hibi, M. Yamaguchi, N. Yamamoto, and F. lshikawa, Nano Lett. 14, 7024, 2014. [6] F. Ishikawa, P. Corfdir, U. Jahn, O. Brandt, Adv. Opt. Mater., 4, 2017, 2016.