| Pacific Rim Symposium on Surfaces, Coatings and Interfaces (PacSurf 2016) | |
| Thin Films | Wednesday Sessions |
| Session TF-WeP |
| Session: | Thin Films Posters Session II |
| Presenter: | Sungho Choi, Sungkyunkwan University, Republic of Korea |
| Authors: | S. Choi, Sungkyunkwan University, Republic of Korea Y. An, Sungkyunkwan University, Republic of Korea C. Lee, Sungkyunkwan University, Republic of Korea J. Song, Sungkyunkwan University, Republic of Korea M.-C. Nguyen, Inha University, Repubilc of Korea Y.-C. Byun, University of Texas at Dallas, USA J. Kim, University of Texas at Dallas, USA R.C. Choi, Inha University, Republic of Korea H.S. Kim, Sungkyunkwan University, Republic of Korea |
| Correspondent: | Click to Email |
Passivation of a high-k/III-V interface is the most important process to be developed for future III-V-based transistors. Recently, there have been several attempts to passivate the interface defects by performing H2 annealing after the high-k deposition on In0.53Ga0.47As: forming gas annealing [1] or H2 high pressure annealing [2].
In this study, we deposited a HfO2/Al2O3 gate stack using atomic layer deposition on the In0.53Ga0.47As substrates with different doping types and carried out H2 high pressure annealing (400 °C) at different pressures (10 bar and 30 bar). According to the time-of-flight secondary ion mass spectrometry and X-ray photoelectron spectroscopy measurements, out-diffusion of In and Ga atoms toward the high-k film was escalated as the H2 pressure increased. The relationship between the observed H2-induced out-diffusion and the resulting electrical properties will be discussed.
[1] K. Tang, R. Droopad, and P. C. McIntyre, ECS Transactions, 69, 53 (2015).
[2] T.-W. Kim, H.-M. Kwon, S. H. Shin, C.-S. Shin, W.-K. Park, E. Chiu, M. Rivera, J. I. Lew, D. Veksler, T. Orzali, and D.-H. Kim, IEEE Elec. Dev. Lett. 36, 672 (2015).