Pacific Rim Symposium on Surfaces, Coatings and Interfaces (PacSurf 2016)
    Thin Films Tuesday Sessions
       Session TF-TuP

Paper TF-TuP11
Device Performance of Tungsten doped InZnO Thin Film Transistor depending on Active Layer Thickness

Tuesday, December 13, 2016, 4:00 pm, Room Mauka

Session: Thin Films Poster Session
Presenter: Hyun-Woo Park, Dongguk university, Republic of Korea
Authors: H.-W. Park, Dongguk university, Republic of Korea
D.-Y. Kim, Dongguk university, Republic of Korea
W.-C. Yang, Dongguk University, Republic of Korea
M.-D. Kim, Chungnam National University, Republic of Korea
K.-B. Chung, Dongguk university, Republic of Korea
Correspondent: Click to Email
Tungsten doped InZnO thin film transistors (WIZO-TFTs) were fabricated using by radio frequency (RF) sputtering system as a function of active layer thickness. In order to explain the degradation of the device performance depending on the active layer thickness, we investigated the correlations between the device performance and physical properties including the film density, surface/interface roughness, band edge state below the conduction band, refractive index and composition along the depth direction. The 10 nm-thick WIZO film is showed the highest film density and the flat interface roughness. In addition, increase of the band edge state and thickness of interface layers could be related to the device performance, which resulted in changes of interfacial trap density.