Pacific Rim Symposium on Surfaces, Coatings and Interfaces (PacSurf 2016)
    Thin Films Tuesday Sessions
       Session TF-TuP

Paper TF-TuP1
P-Type Nitrogen Doped Zinc Oxide Films Prepared By Magnetron Sputtering

Tuesday, December 13, 2016, 4:00 pm, Room Mauka

Session: Thin Films Poster Session
Presenter: Jyh-Shiarn Cherng, Ming Chi University of Technology, Taiwan, Republic of China
Authors: J.Y. Chen, Ming Chi University of Technology, Taiwan
H.T. Zhang, Beijing Institute of Graphic Communication, China
G. Zhao, Beijing Institute of Graphic Communication, China
Q. Chen, Beijing Institute of Graphic Communication, China
J.S. Cherng, Ming Chi University of Technology, Taiwan, Republic of China
Correspondent: Click to Email
P-type nitrogen doped zinc oxide (NZO) was prepared on a glass substrate by RF magnetron sputtering using N2 as the nitrogen source. The structural, electrical and optical properties of the NZO films were investigated by X-ray diffractometry, X-ray photoelectron spectroscopy, Raman spectroscopy, Hall effect and Seebeck effect measurements, and UV-Vis spectroscopy. The electrical properties of the p-type NZO showed a conductivityof 7.6×10-2 (Ω-cm)-1 and remained stable for over 259 days at the optimized process conditions. With the increase of N2 flow rate during sputtering, the conductivity of the NZO films exhibited an n-p-n transition. The corresponding mechanism of this transition and the origin of the p-type conductivity were discussed accordingly.