| Pacific Rim Symposium on Surfaces, Coatings and Interfaces (PacSurf 2016) | |
| Thin Films | Tuesday Sessions |
| Session TF-TuM |
| Session: | Nanostructured Surfaces & Thin Films II |
| Presenter: | Seongheum Choi, Sungkyunkwan University, Korea, Republic of Korea |
| Authors: | S.H. Choi, Sungkyunkwan University, Korea, Republic of Korea J. Kim, Sungkyunkwan University, Korea, Republic of Korea J. Choi, Sungkyunkwan University, Korea, Republic of Korea S. Cho, Sungkyunkwan University, Korea, Republic of Korea M. Lee, Yonsei University, Korea E. Ko, Yonsei University, Korea I. Rho, SK Hynix Inc. C.H. Kim, SK Hynix Inc. D.-H. Ko, Yonsei University, Korea H.S. Kim, Sungkyunkwan University, Korea, Republic of Korea |
| Correspondent: | Click to Email |
The epitaxially-grown strained Si:P film can be used as an uni-axial stressor and/or a low resistance contact material in the n-channel metal-oxide-semiconductor field-effect transistors (NMOSFETs) [1]. Because an additional silicidation process is expected on top of the strained Si:P layer, there have been a few attempts to synthesize metal-silicide films, such as Ti- and Ni-silicides [2, 3].
In this presentation, we will compare the microstructural properties of the NiSi films formed on a Si substrate and a strained Si:P film. The strained Si:P film (P concentration of ~1.9%) was epitaxially grown on Si using a low-pressure chemical vapor deposition system. After HF cleaning and Ni deposition, silicidation was performed by rapid thermal annealing at 400~800 °C for 1 min in N2 ambient. According to microstructural and electrical comparison with the NiSi film formed on Si, a number of large-sized grains with a flat interface existed and a delay of thermal agglomeration was observed in the NiSi film on Si:P. The possible difference in the grain-growth mechanism of the NiSi films on Si and Si:P will be discussed.