| Pacific Rim Symposium on Surfaces, Coatings and Interfaces (PacSurf 2016) | |
| Thin Films | Monday Sessions |
| Session TF-MoM |
| Session: | Advances/Innovation in Synthesis & Characterization |
| Presenter: | Arnaud Etcheberry, Paris Saclay University, France |
| Correspondent: | Click to Email |
Evaluation of perturbation induced by ionic clusters bombardmen: XPS and Electrochemical coupled approach.
A.Etcheberry, D. Aureau, Anne-Marie Gonçalves, Muriel Bouttemy, Mathieu Frégnaux, Jackie Vigneron
Institut Lavoisier de Versailles UMR 8180 CNRS_UVSQ
45 avenue de Etats Unis 78035 Versailles France
The XPS profiling is a key technique to provide quantitative compositional profiles of ultra thin and thin films. XPS profiling needs ion guns etching which can induce perturbations of the XPS probed films. It is particularly true when fragile films are submitted to the etching procedure as for example organic films, oxide etc. Rational evaluation of the exact nature of the perturbation is an very important question which needs accurate approach to compare different etching procedure and to propose calibrated etching strategy. In this paper we treat the evaluation of perturbation induced by ionic argon cluster gun which is a very interesting method to provide very different conditions to perform XPS profiling as soon as possible close to the actual compositional profile. To perform that we use as supporting material InP a well known semiconductor for which problem of preferential etching is well documented. We chose to combine on same samples (n,p & undoped) XPS, UPS and electrochemical characterizations to evaluate the impact of a ionic or ionic cluster bombardment on the responses of the surface. We show that modifying the size of the cluster, the energy, the angle we induced very important modulation of the perturbations. The interesting feature of our proposal is that XPS modification: position of Peak Energy, valence band, fwhm, atomic ratio are related to the electric ones: capacitive response, I-V toward electrochemical processes, anodic dissolution. This coupling approach gives rise to a set of experimental data which are used as calibration information to provide adapted perturbation by an ion cluster bombardment. Moreover electrochemical diode has the advantage to be easily broken so it is compatible with XPS, Electrochemistry sequences which allows very fast experimental cycles. For example perturbation induced by ionic bombardment can be eliminated by dissolution of the semiconductor induced by chemical etching or by anodic oxidation. Both provide quantitative evaluation of the depth of the perturbed zone before a complete recovering of the initial XPS or electrochemical responses. We propose in this paper to detail several facets of this interfacial chemistry study