| Pacific Rim Symposium on Surfaces, Coatings and Interfaces (PacSurf 2016) | |
| Thin Films | Monday Sessions |
| Session TF-MoE |
| Session: | Nanostructured Surfaces & Thin Films I |
| Presenter: | Taejin Park, Samsung Electronics, Republic of Korea |
| Authors: | T.J. Park, Samsung Electronics, Republic of Korea H.J. Kim, Sungkyunkwan University, Korea, Republic of Korea M. Lim, Sungkyunkwan University, Korea, Republic of Korea W.S. Ahn, Sungkyunkwan University, Korea, Republic of Korea S.H. Choi, Sungkyunkwan University, Korea, Republic of Korea J.B. Kim, Samsung Electronics, Republic of Korea J. Uh, Samsung Electronics, Republic of Korea B.S. Kim, Samsung Electronics, Republic of Korea Y.S. Hwang, Samsung Electronics, Republic of Korea H.S. Hong, Samsung Electronics, Republic of Korea S.J. Jeong, Samsung Advanced Institute of Technology, Republic of Korea S.J. Park, Samsung Advanced Institute of Technology, Republic of Korea Y.S. Kim, Sungkyunkwan University, Korea, Republic of Korea H.S. Kim, Sungkyunkwan University, Korea, Republic of Korea |
| Correspondent: | Click to Email |
The atomic layer deposition (ALD) of high-k films usually fails on two dimensional (2D) materials due to the absence of dangling bonds on their surface, which only allows physisorption of a precursor that can be easily detached via thermal desorption [1].
In this presentation, the surface coverage of the ALD-Al2O3 films on various 2D flakes (MoS2, WS2, WSe2, and h-BN) was examined as a function of the substrate temperature to extract the adsorption energy (Eads) of a trimethyl-aluminum (TMA ) precursor . The film coverage exhibited a strong dependence on the ALD temperature and the 2D substrate. The Eads values of TMA on various 2D material surfaces were experimentally determined using the measured film coverage after 10-cycled ALD at different temperatures. The Eads values were in the range of 0.05-0.26 eV, which corresponded to the values for van der Waals physisorption and could be well explained by different induced dipole polarizability of 2D materials.
[1] H. Liu et al., Appl. Phys. Lett. 100, 152115 (2012).