Pacific Rim Symposium on Surfaces, Coatings and Interfaces (PacSurf 2014)
    Thin Films Tuesday Sessions
       Session TF-TuP

Paper TF-TuP40
The Effects of Plating Applied on Thin Film Process to the Stress Analysis of Silicon Substrate by Simulation

Tuesday, December 9, 2014, 4:00 pm, Room Mauka

Session: Thin Films Poster Session
Presenter: Sang-Hoon Lee, Yeungnam University, Republic of Korea
Authors: S.-H. Lee, Yeungnam University, Republic of Korea
C. Park, Yeungnam University, Republic of Korea
Correspondent: Click to Email
Crystalline silicon is a great, low cost, cheap material and the most widely used for solar cells application. Crystalline silicon solar cells are modules built using crystalline silicon (c-Si), developed from the microelectronics technology industry. Crystalline silicon solar cells have high efficiency. To reduce the cost of manufacturing process, the plating process is analyzed by using the simulation of stress applied on the silicon substrate. In this study, the occurring of metal-silicon interface was modeled to predict the quantitatively of stress affected inside the silicon substrate. We predicted through the changing of simulation what the factors will give a large effect on the value of the results. The stress characteristic factor was found as major factor of the substance to be plated. Mechanical properties of plating materials were changed as density, Young’s modulus, and Poisson’s ratio. Thermal properties are not considered as parameters because the plating system is became the progress to isothermal process. The density and Poisson’s ratio are not expected to give greater effecting on the stress, so Young’s modulus is main factor. It was affected sensitivity on the stress of silicon substrate. Controlling the Young's modulus can be adjusted stress in the silicon substrate.