Pacific Rim Symposium on Surfaces, Coatings and Interfaces (PacSurf 2014)
    Energy Harvesting & Storage Tuesday Sessions
       Session EH-TuP

Paper EH-TuP13
In-situ Investigation of phase Evolution during Cu2ZnSnSe4 Thin Film Photovoltaic Absorber Formation from Various Stacked Cu-Zn-Sn Precursors

Tuesday, December 9, 2014, 4:00 pm, Room Mauka

Session: Energy Harvesting & Storage Poster Session
Presenter: Hyeonwook Park, Yeungnam University, Republic of Korea
Authors: H. Park, Yeungnam University, Republic of Korea
J. Han, Yeungnam University, Republic of Korea
W.K. Kim, Yeungnam University, Republic of Korea
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For several decades, chalcopyrite Cu(InGa)Se2 (CIGS) thin films were considered as a potential candidate for use as light absorbers in high–efficiency thin film photovoltaic cells. Recently, a cell efficiency of 20.9% (Solar Frontier, 2014), which is a little bit higher than multi-crystalline Si cells (20.4%), has been reported. Over the last decade, great attention has been moved to kesterite Cu2ZnSn(S,Se)4 (CZTSSe) as a promising low-cost alternative to chalcopyrite CIGS. In this paper, temperatur-dependent reaction pathways to kesterite Cu2ZnSnSe4 (CZTSe) thin film photovoltaic absorber formation by selenization of various stacked precursor structures including (Cu+Sn)/Zn and (Cu+Zn)/Sn were systematically investigated using in-situ high-temperature X-ray diffraction system, consisting of a PANalytical X’pert Pro MPD diffractometer and an Anton Paar HTK 1200 N furnace. A custom-designed graphite dome was utilized in order to create Se vapor at the elevated temperatures and minimize the loss of vaporized Se. Furthermore, CZTSe films formed by selenization of stacked Cu-Zn-Sn/Se precursors were characterized by X-ray diffraction and raman spectroscopy. The results revealed that the formation temperature of CZTSe and detailed phase evolution would be affected by stacked structure of Cu-Zn-Sn. Furthermore, precursor structure with co-sputtered Cu and Sn (e.g., (Cu+Sn)/Zn and Zn/(Cu+Sn)) could reduce Sn loss effectively during the formation of CZTSe than that with single-layered Sn (e.g., (Cu+Zn)/Sn and Sn/(Cu+Zn))