Winners of the Peter Mark Memorial Award
The Peter Mark Memorial Award was established in
1979 in memory of Dr. Peter Mark who served as the Editor of the Journal of
Vacuum Science and Technology from 1975 to 1979. The award is presented
annually during the International Symposium to a young scientist or engineer
(35 years of age or under during the year the award is made) for outstanding
theoretical or experimental work, at least some of which must have been
published in JVST. The Award consists of a cash award, currently
$6,500, a certificate and an honorary lectureship at a regular session of the
International Symposium.
1980
Christopher R. Brundle
“For significant impact on the scientific and
technological community in a wide range of activities, including pioneering
research in the development and application of photoelectron spectroscopy to
surface science and catalysis, publication, and technical leadership.”
1981 L. Kazmerski
“For demonstrating the correlation between the electrical and chemical
properties of interfaces in polycrystalline photovoltaic devices.”
1982 Charles W. Magee
“For imaginative developments of secondary ion mass spectrometry as a
qualitative analytical tool for the solution of material problems.”
1983 D. James Chadi
“For innovative, accurate models and theoretical techniques applied to
surface structure determinations.”
1984 Barbara J. Garrison
“For developing computer models of ion-solid interactions to obtain
fundamental insights into the collision processes; and to obtain analytical
bonding, and structural information.”
1985 Franz J. Himpsel
“For his contributions to the understanding of the electronic structure of
materials through the use of angle-resolved energy band mapping, surface core
level spectroscopy and inverse photo-emission.”
1986 Richard A. Gottscho
“For his insightful applications of spatially and temporally resolved
spectroscopic techniques to the diagnostics and modelling of processing
plasmas.”
1987 Raymond T. Tung
“For his research on the growth and properties of epitaxial silicides and
for major contributions to the understanding of metal/semiconductor interfaces.”
1988 Jerry Tersoff
“For innovative approaches to the theoretical understanding of the
electronic structure, properties, and measurement of surfaces and interfaces.”
1989 Randall W. Feenstra
“For original applications of scanning tunneling microscopy to the study of
atomic scale geometric and electronic structure of surfaces.”
1990 Stephen M. Rossnagel
“For contributions to understanding and applications of magnetron and ion
beam sputtering.”
1991 William J. Kaiser
“For innovative applications of electron tunneling techniques.”
1992
No Award
1993 Robert J. Hamers
“For outstanding contributions to the development of scanning tunneling
microscopy and spectroscopy as tools for quantitative analysis of the electronic
properties of surfaces.”
1994 Marjorie Olmstead
“For elucidating the nature of semi-conductor surfaces and the
heteroepitaxial growth of insulating materials on these surfaces.”
“For her pioneering research in combining ab initio quantum chemistry with molecular dynamics in the study of important problems in heterogeneous catalysis and semiconductor processing”
“For seminal research leading to molecular level understanding of the mechanisms and kinetics of surface chemical reactions relevant to heterogeneous catalysis and to materials deposition.”
"For pioneering studies of atomic-scale, kinetic and thermodynamic aspects of the morphology of Si surfaces, and significant innovations in scanning tunneling microscopy that make such measurements possible"
"For his seminal contributions to the atomic level understanding of thermal conductivity in thin films and surface roughening/smoothing mechanisms during film growth and etching"
"For pioneering work in the development and application of optical diagnostic techniques to understand the chemistry and physics associated with plasma deposition of dielectric thin films"
"For seminal studies of Diels-Alder chemistry of semiconductor surfaces, and for contributions to a fundamental understanding of the reaction processes underlying semiconductor growth and functionalization"
“For furthering our knowledge of nanophase and reduced dimensionality systems by creative use of angle-resolved photoemission”
“For contributions to the fundamental understanding of strain relaxation, alloy formation, diffusion, and the correlations among microstructure, electronic, and optical properties.”
“For pioneering work on epitaxial complex oxide thin film heterostructures.”